Radiation-Tolerant High-Voltage, High-Power Electronics

Syrnatec proposes development of radiation hardened Diodes and MOSFETs for high power applications using Ga2O3 technology. Due to increasing power requirements of new systems (such as fast charging technology for electric vehicles), there is a constant need for energy efficient, low noise power conversion electronics compared to the available Silicon based semiconductors. This need opens the avenue for Wide band bap material-based semiconductors, such as GaN, SiC, AlGaN and Ga2O3. Manufacturers have designed various power conversion solutions in the operating voltage range from 600 to 1600V using SiC and GaN; however, there are no products commercially available for operating voltages beyond 1600V, which is why Gallium Oxide Semiconductors offer a promising solution. Ga2O3 falls under UWBGS category, due to the larger bandgap (~4.8 eV) compare to SiC (3.3 eV) and GaN (3.4 eV), and offer better radiation resistance since a higher energy level is required to break their molecular bonds. Ga2O3 semiconductors can operate with several kilovolts and exhibit higher stability and robustness, and therefore is suitable for High voltage, High Power, Medium Power, Low Power applications. Deliverables will be the prototype device design structure and simulation results illustrating resilience to Heavy Ion induced faults (Single Event Effects). Results will be demonstrated with a design of Schottky diode with Metal rings around Schottky Contact to support an operating voltage of 1200 V, current of 40 A, and breakdown voltage of 2000 V while being resilient to 75 MeV-cm2/mg. The scope of work will also include developing a MOSFET design along with simulation results for an operating voltage of 650V, 40A and low RDSON @ lt; 24mOhm. This disruptive technology will allow for the commercialization of game changing high power electronics.