SBIR/STTR Research Award
Rad-Hard Ga2O3 Diodes
Award amount
$124,993Program and phase
SBIR · Phase IAward year
2021Award details
- Awarding agency
- National Aeronautics and Space Administration
- Branch
- Not reported
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2021-05-11
- Contract end date
- 2021-11-19
- UEI
- GDV6R1VLRVN7
- Solicitation number
- SBIR_21_P1
- Topic code
- Z1
Research abstract
In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing Ga2O3shy; materials and domestically produced, chemically pure halide vapor phase epitaxy (HVPE)-derived epilayers and study radiation effects in these exciting new devices which are poised to offer improvements in size, weight, and efficiency over devices prepared from other wide-bandgap semiconductor materials. Phase I will also lay the groundwork for a more substantial modeling/simulation effort in Phase II to assist in rad-hard device design based on the expertise of CFDRC with Kyma feedback.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration