SBIR/STTR Research Award

Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation

Award identifier 05ed8c7fb5287aa923eaa7dd932a6a53d4a471914deefb36ad9d4f619aa46a8dAwarding agency Department of Defense · Navy

Award amount

$2,000,000

Program and phase

SBIR · Phase II

Award year

2021

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
GENESIC SEMICONDUCTOR INC.
Proposal award date
2020-10-08
Contract end date
2023-11-14
UEI
DV7NF6NE49J6
Solicitation number
18.2
Topic code
N182-130

Research abstract

GeneSiC Semiconductor is developing > 20 kV, > 1kA stackable 4H-SiC based DRSDs in this SBIR program for next-generation US NAVY applications featuring: • Single-Chip ratings of = 2 kV and = 100 A • Round, positive bevel-terminated devices with solderable topside and backside metallization • Switching Times < 1 ns enabled by careful epi and device design • Special techniques to increase carrier lifetime in p-base layers leading to higher pumping durations and higher voltage compression ratios. • =1 MHz repetition rates due to lower energy losses in SiC combined with SiC’s higher thermal dissipation capability GeneSiC will be solely responsible for all tasks related to the proposed program.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce

Agency intelligence

Department of Defense

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