SBIR/STTR Research Award

Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities

Award identifier 35c87598d8c3a4a9110fa8070ef408da1e94729c453451aab43b689a668c433bAwarding agency Department of Energy

Award amount

$1,148,670

Program and phase

SBIR · Phase II

Award year

2020

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
GENESIC SEMICONDUCTOR INC.
Proposal award date
2020-08-24
Contract end date
2022-08-23
UEI
DV7NF6NE49J6
Solicitation number
DE-FOA-0002156
Topic code
06b

Research abstract

Power electronics for Grid-tied Battery Energy Storage Systems (BESS) featuring: (a) newly developed monolithically integrated High Voltage SiC MOSFET- Schottky Diodes; (b) Intelligent Gate Drivers that provide in-situ monitoring and restoration capabilities; and (c) novel three level Neutral point clamping topology are proposed. An isolated topology such as dual active bridge followed by an active front end converter and a three-level neutral point clamped topology featuring 3300 Volt rated medium-voltage silicon carbide MOSFETs with integrated Schottky diodes is proposed. An intelligent medium-voltage gate driver will minimize the problems of voltage isolation for series connected device topologies. With respect to device development, the Phase I project was able to successfully develop 3300 Volt, 100 Ampere rated silicon carbide MOSFETs with integrated Schottky diodes. On the energy storage system side, the Phase I was able to insert the fabricated silicon carbide MOSFET-diodes into a battery energy storage system inverter switching at 15 kilohertz. A proof-of- concept test was performed at 6000 Volt DC bus and peak load current of 25 Amperes, Specific technical objectives of the Phase II project include: 1. Design and Process Freezing the SiC MOSFET-Diode device technology after improvement few key parameters. Complete device qualification be performing industry-standard, energy storage system specific reliability testing 3. Develop an intelligent gate drive with novel mission-critical detection and restoration features 4. Insertion of finalized MOSFET-diode based power modules into battery energy storage system at NC State and quantifying system efficiency and benchmarking against incumbent Si based technologies. This program will target medium voltage inverter manufacturers like GE, ABB, S&C and Saft America to adopt the device and circuit topologies developed in this program. The higher conversion efficiencies will allow these compact inverters to be deployed at a large scale from residential to industrial usage. The approach is to collaborate with existing inverter manufacturers to incorporate its components into inverters. The competitive advantage is in terms of cost, high temperature, and total power ratings of the devices that form the core of the inverter technology.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce

Agency intelligence

Department of Energy

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