SBIR/STTR Research Award

Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers

Award identifier cdedeb7ce3e2c131dcdadc6fc36b0414bf8c55a57a82b7e474743b8677636f78Awarding agency Department of Energy

Award amount

$206,500

Program and phase

SBIR · Phase I

Award year

2019

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
GENESIC SEMICONDUCTOR INC.
Proposal award date
2019-07-01
Contract end date
2020-06-30
UEI
DV7NF6NE49J6
Solicitation number
DE-FOA-0001941
Topic code
13b

Research abstract

Next-generation extreme fast charging stations with 400 kilowatt output is identified as key to significantly increase the market share of electric vehicles. As compared to the existing 50 kW fast charging stations, future 400 kW rated extreme charging stations directly connected to the medium-voltage electricity grid will require the development of 3300 volt rated, automotive-qualified silicon carbide power devices, which are not available in the commercial marketplace. Demonstrated device designs and process technology in combination with the use of a high-volume manufacturing strategy on large diameter silicon carbide wafers is proposed in this proposed program for commercial production of 3300 Volt rated medium- voltage silicon carbide MOSFETs for insertion into next-generation of extreme fast chargers. The proposed device and manufacturing strategies will drastically reduce the manufacturing costs for silicon carbide transistors and rectifiers, making them cost-competitive with the existing silicon technology. While tremendous progress has been recently made towards the manufacturing of 3300 volt silicon carbide MOSFET chips, significant effort is needed to make it into a viable product. The prime objective of the Phase I proposal is to complete the productization phase in order to commercialize these chips at the end of Phase 2.Electric vehicle power electronics manufacturers are expected to be direct customers of the proposed silicon carbide devices to be developed in this program. Reducing the weight of the power module, which represents 37% of the total weight will extend the insertion of extreme fast chargers and/or reduce the size and cost of the battery. Significantly reduced silicon carbide chip-sizes for the same current rating along with low-cost, high-volume manufacturing strategies proposed in this program will help meet the aggressive power electronics targets set for the electric vehicle industry by the DOE for the year 2022. This in turn will enhance the country’s energy security by reducing dependence on foreign oil, save money by cutting fuel costs for American families and businesses, and result in a cleaner environment by reducing harmful CO2 emissions from gas- powered vehicles.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce

Agency intelligence

Department of Energy

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