SBIR/STTR Research Award

Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers

Award identifier 55659395621fd841fed1fdf9c19321854db3c05ca636d0f04e3e2122df8c3bcbAwarding agency Department of Defense · Air Force

Award amount

$50,000

Program and phase

SBIR · Phase I

Award year

2020

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
KYMA TECHNOLOGIES, INC.
Proposal award date
2020-03-09
Contract end date
2020-06-09
UEI
GDV6R1VLRVN7
Solicitation number
X20.1
Topic code
J201-CSO1

Research abstract

Gallium nitride (GaN) epiwafers are used to make RF microwave monolithic integrated circuits (MMICs) in military radar systems, LEDs in TVs and solid state lighting, and many other applications. Kyma pulsed sputter deposition (PSD) GaN epiwafers have many advantages over existing MOCVD GaN epiwafer growth techniques. During Phase I, Kyma will identify customers and key technical specifications for high quality Gallium Nitride (GaN) epitaxial material for RF (MMICs) and power electronics applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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