Radiation Effects and Reliability Mechanisms for Advanced Semiconductor Device Technologies

Radiation tolerance is a major concern for semiconductor-based microelectronics in USAF/DoD systems that operate at high altitudes or in outer space. Radiation reliability studies on semiconductor devices typically focus on failure signatures observable in electrical characteristics. However, the latent nature of some radiation-induced physical defects may disallow thorough characterization based solely on terminal measurements. CFD Research Corporation and Arizona State University propose a complementary modeling and experimental approach to address this challenge. We will combine physics-based modeling of selected semiconductor devices with molecular dynamics simulations to derive initial insight into the electrical and physical response mechanisms to incident radiation. This understanding will inform subsequent nanostructural characterization through detailed Transmission Electron Microscopy (TEM)-based techniques. We will also develop deep-learning models based on TEM characterization results to support efficient prediction and detection of radiation-induced defects. In Phase I, we will identify USAF/DoD stakeholders and requirements for radiation characterization in representative components. We will perform feasibility analysis via TEM measurements of existing oxide-nitride dielectric stacks, and a literature review to develop a robust plan for continued R&D. In Phase II, we will expand the analysis to include other technologies, e.g., III-nitrides, and demonstrate a detailed methodology for characterizing radiation effects in semiconductor components.