SBIR/STTR Research Award

Field Programmable Short Wave Infrared Photodetectors

Award identifier b30804a7ef037679f8f1146de6be63975747300902e10660b085224b4b8c75e3Awarding agency National Aeronautics and Space Administration

Award amount

$124,999

Program and phase

SBIR · Phase I

Award year

2018

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Award details

Awarding agency
National Aeronautics and Space Administration
Branch
Not reported
Recipient company
SK Infrared LLC
Proposal award date
2018-07-27
Contract end date
2019-02-15
UEI
H9KWYKZ4YFL7
Solicitation number
SBIR_18_P1
Topic code
H9

Research abstract

We propose to advance the state-of-the-art in short wave infrared (SWIR) detectors to meet NASA’s needs for advancements in communications technology. Antimonide-based Type II Superlattice (T2SL) infrared (IR) detectors have made significant advances in the past decade. The interest in this technology stems from (1) the ability to tailor the T2SL bandgaps across the IR region and (2) the manufacturability of T2SL structures using III-V foundries and horizontal integration schemes. NASA researchers have been involved with efforts to develop T2SL IR detectors for a variety of space-related missions, both in communications and sensing. We propose to complete a fundamental feasibility study leading to a prototype of a single pixel, field programmable, SWIR photodetector. This detector will use antimonide-based T2SL materials as the absorber. This detector will operate at relative high temperature (above 250K). Most uniquely, this detector’s voltage bias can be programmed to operate with either high dynamic range or high sensitivity. High dynamic range uses a low voltage bias (<1V) and operates the detector in a standard PIN configuration. High sensitivity uses a high voltage bias (20 to 30V) and operates in the linear amplification region of an avalanche photodiode (APD). The detector is engineered for high signal-to-noise operation in both modes. The user or the control software can adaptively trade off dynamic range versus sensitivity on the fly and in response to measured characteristics of the scene (for example, photon flux or noise conditions). This detector will work ideally with an emerging generation of readout integrated circuits that will control the voltage of pixels selectively, leading to a focal plane array (FPA) that can algorithmically decide the operational mode of each pixel. Because the band structure of T2SL materials is designed, we will be able to engineer a detector that meets all of these targets simultaneously.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

29 SBIR/STTR records share this UEI (2010–2025). Reported award amounts total $12,860,322. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, National Science Foundation, Department of Agriculture, Department of Energy

Agency intelligence

National Aeronautics and Space Administration

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