SBIR/STTR Research Award
Robust SiC MOSFET based Power Modules
Award amount
$1,999,935Program and phase
SBIR · Phase IIAward year
2017Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- GENESIC SEMICONDUCTOR INC.
- Proposal award date
- 2017-09-07
- Contract end date
- 2020-10-19
- UEI
- DV7NF6NE49J6
- Solicitation number
- 16.1
- Topic code
- N161-066
Research abstract
Future all-electric warships demand improved electrical power density, conversion efficiency and system reliability. High Power converters are required for applications such as electromagnetic rail gun, EMALS, sensors and propulsion on comparable displacement, future ship platforms (see Figure 1). Development of 6500 V/100 A SiC MOSFET based modules, with a cost structure of 3300 V. The technology remains cost-prohibitive, especially for realizing large-area SiC MOSFET/rectifier die necessary for realizing 100 A current rating at these high voltages
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation
- 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry
- Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers
- Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities
- Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce