Low-Cost Gallium Nitride (GaN) on Diamond Semiconductors for Microwave Power Amplifiers

Phase II of this program builds on the remarkable progress that was made in Phase I toward the development of single crystal GaN films grown on polycrystalline diamond substrates. As the overall goal of the program is related to the development of a low-cost manufacturing process to produce GaN on diamond templates for RFIC applications, our technical objectives are pointed toward this goal. In Phase I we successfully proved the principle of a GaN on diamond template production process consisting the growth of GaN by hydride vapor phase epitaxy (HVPE) on novel buffer layers on polycrystalline diamond substrates. In Phase II we will transition this proof of principle into prototype GaN on diamond templates.