SBIR/STTR Research Award
Cost Effective GaN on Diamond Template Manufacturing
Award amount
$149,950Program and phase
SBIR · Phase IAward year
2015Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2015-08-11
- Contract end date
- 2017-02-18
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2015.1
- Topic code
- N151-046
Research abstract
Kyma Technologies proposes an innovative approach to grow device-quality single crystal GaN on polycrystalline diamond substrates. The result is a GaN-on-diamond template that can be inserted directly into a GaN FET epi process.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-Cost Gallium Nitride (GaN) on Diamond Semiconductors for Microwave Power Amplifiers
- Low-Cost Gallium Nitride (GaN) on Diamond Semiconductors for Microwave Power Amplifiers
- Low-Cost Gallium Nitride (GaN) on Diamond Semiconductors for Microwave Power Amplifiers
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration