900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates

Reducing the size, weight, and increasing the efficiency of automotive traction power inverters requires the development of novel high voltage, high current silicon carbide high speed rectifiers, since the existing silicon technology is severely limited in terms of operating temperature, frequency and energy efficiency. However, the non-optimized device and manufacturing technology currently used for silicon carbide power diode fabrication results in higher energy losses and a noncompetitive price point with respect to silicon. How is the problem being addressed? Novel device and process technology in combination with the use of a high volume manufacturing strategy on large diameter silicon carbide wafers is proposed in this proposed program for achieving near theoretical device performance on high current power Schottky rectifiers. The proposed device and manufacturing strategies will drastically reduce the manufacturing costs for silicon carbide Schottky diodes, making them costcompetitive with the existing silicon technology. What was done in Phase I: Phase I was focused on developing and optimizing the device and layout designs necessary to scale up the rated current of the silicon carbide Schottky rectifiers to 100 Amperes. A major task involved transferring the process technology to a largescale, high volume foundry identified in the proposal. A pilot wafer lot was implemented at the large volume foundry and the device performance was benchmarked against the current state of the art. What is planned for Phase II: Phase II will be focused on increasing the current rating of the diodes to 200 Amperes, while focusing on the 900 Volt market segment as required for automotive applications. Detailed reliability investigations pursuant to the industry standards is planned for Phase II. A detailed commercialization strategy will also be implemented during Phase II Commercial Applications and Other Benefits: Electric vehicle power electronics manufacturers such as General Motors, Delphi Automotive and Cummins Power Systems are expected to be direct customers of the proposed silicon carbide devices to be developed in this program. Reducing the weight of the power module, which represents 23% of the total Inverter weight will extend its electric range and/or reduce the size and cost of the battery. Significantly reduced silicon carbide chipsizes for the same current rating along with lowcost, high volume manufacturing strategies proposed in this program will help meet the aggressive power electronics targets set for the electric vehicle industry by the DOE for the year 2022. This in turn will enhance the country’s energy security by reducing dependence on foreign oil, save money by cutting fuel costs for American families and businesses, and result in a cleaner environment by reducing harmful CO2 emissions from gas powered vehicles. Key Words: Silicon Carbide, Wide Bandgap Semiconductors, Automotive, Inverter, High Current