SBIR/STTR Research Award

AllSiC power module based boost converter platform for gridtied energy storage applications

Award identifier e58491734e2ed97b139c82f53d74696073e6d502f6cf9370eeba930b254eb4c6Awarding agency Department of Energy

Award amount

$1,010,000

Program and phase

SBIR · Phase II

Award year

2016

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
GENESIC SEMICONDUCTOR INC.
Proposal award date
2016-08-01
Contract end date
2018-07-31
UEI
DV7NF6NE49J6
Solicitation number
DE-FOA-0001490
Topic code
10a

Research abstract

This project will create a new category of advanced all Silicon Carbide power inverters for use in energy storage in the medium voltage range and > 100 kW ratings. A design showing a significant increase in circuit efficiency, cost reduction, an increase in power density, and a reduction in thermal management requirements over the existing Silicon power inverters will eliminate significant waste of electric energy in large power converters, resulting in huge energy savings for the United States, while accelerating the adoption of renewable energy generation like solar and wind power systems. How is the problem being addressed? At the end of Phase II of this proposed SBIR program, 400 kilo Watt rated power converters will be constructed using recently commercialized monolithic SiC transistor/diode devices. These power inverters will deliver unprecedented improvements in efficiency, and thermal management requirements to the electrical storage and electricity delivery infrastructure of the United States. What was done in Phase I: In Phase I, a feasibility study was conducted for designing the power electronics converter for grid tied applications. Experimental demonstration of a 3phase 2level voltage source inverter was conducted. The 1700 V Silicon Carbide Junction Transistor performance was Bench marked against state of the art Si Insulated gate bipolar transistors in terms of energy losses. What is planned for Phase II: Phase II will be focused on optimizing the device technology for manufacturing 1700 Volt/50 Ampere rated SiC integrated transistor/diode devices. The silicon carbide power devices developed in this program will be stacked serially in order to demonstrate a medium voltage 4160 Volt grid connection topology. A conceptual extension of this topology for 13800 Volt utility grid connection will also be developed. Commercial Applications and Other Benefits: The 400 kW allSiC power inverters to be developed in this program will significantly improve the performance and decrease the size/weight/footprint of 12.47 kV energy storage grid tied inverters, FACTS based devices, and power system switchgear. Industrial applications such as electrostatic precipitators, and oil drilling equipment. This in turn will increase market acceptance of these high end products and thereby drive skilled labor jobs creation in the US. Key Words: Medium Voltage, Silicon Carbide, MIDSJT, Thyristors, Diodes, Power Converter, Phase Leg Modules, High Temperature.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce

Agency intelligence

Department of Energy

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