SBIR/STTR Research Award
Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics
Award amount
$79,994Program and phase
STTR · Phase IAward year
2016Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2016-07-11
- Contract end date
- 2017-05-10
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2016.0
- Topic code
- N16A-T023
Research abstract
High power, high voltage switching via semiconductor materials is attractive from a size, weight, and profile perspective. The Baliga figure of merit for high voltage for Ga2O3 is 3,415 (relative to Si), which suggests this material is well-suited for power device applications. Kyma Technologies proposes to design a deposition system capable of growing monoclinic beta-polytype Ga2O3, and n-type and p-type layers. The deposition rates will be > 4 um/hr; this lends itself to halide vapor phase epitaxy (HVPE), and has already been successfully accomplished elsewhere. This work will build on Kymas extensive experience designing, building and deploying HVPE for GaN and AlN.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics
- A New MOCVD Platform for Commercially Scalable Growth of -Ga2O3 Device Structures
- Epitaxial Gallium Oxide Growth System for Ultra High Voltage Power Electronics