Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost converter platform for up-tower wind applications
Award amount
$150,000Program and phase
SBIR · Phase IAward year
2013Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- GENESIC SEMICONDUCTOR INC.
- Proposal award date
- 2013-06-10
- Contract end date
- Not reported
- UEI
- DV7NF6NE49J6
- Solicitation number
- DE-FOA-0000801
- Topic code
- 10b
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation
- 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry
- Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers
- Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities
- Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- 10bWorkforce Development Bioenergy Experiential Learning Tool
- Skill in a Flash
- High-Pressure, Low Temperature Composite Nozzles for Long-Term H2 Dispensing
- Thermoplastic Forming of Bulk Metallic Glass Nozzles for High-Pressure, Low-Temperature Hydrogen Fueling
- High-Pressure, Low Temperature Composite Nozzles for Long-Term H2 Dispensing
Research funding history
41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce