SBIR/STTR Research Award

Silicon Carbide Quasi-Bipolar Junction Transistor (QBJT)-Based boost converter platform for up-tower wind applications

Award identifier 3dcb8eaebc23063f027498d87d43e60ca4ff4882bfcca343dc06a724e946f48aAwarding agency Department of Energy

Award amount

$150,000

Program and phase

SBIR · Phase I

Award year

2013

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
GENESIC SEMICONDUCTOR INC.
Proposal award date
2013-06-10
Contract end date
Not reported
UEI
DV7NF6NE49J6
Solicitation number
DE-FOA-0000801
Topic code
10b

Research abstract

SiC power electronics are ideally suited for reducing the size and weight of power electronics systems that are used in wind power converters. Present power electronics systems require large transformers which operate a modest frequencies that prevents their use on top of the turbine tower. The electrical parasitics introduced by the interconnections between wind turbine and power conversion electronics limits the efficiency and usability of power electronics. Direct grid connection of the wind turbine is not possible due to these limitations. Leveraging a strong expertise in & gt; 10 kV capable SiC power Quasi-Bipolar Junction Transistor (QBJT) device designs and ultra-high frequency power conversion enabled by SiC SJTs, this proposed SBIR program will demonstrate an unprecedented compactness and efficiencies in wind power conversion circuits by leveraging SiC QBJT and Super Junction Transistor (SJT) for up-tower wind energy applications. This topology makes use of the newly developed 1200 V, 50 A SiC SJT and 13 kV, 10 A SiC QBJT for this application. The 690 V, 3- phase output of the wind turbine converter system is interfaced with the 13.8 kV, 60 Hz, 3-phase medium voltage distribution grid using this topology. The use of SiC based SJT devices will result in very small loss (high efficiency) for the overall power conversion system. The proposed power conversion system is for 1 MVA system but can be easily scaled up to 3.5 MW (typical large wind turbine ratings). This research will usher a new generation of high-voltage SiC circuits, which will find widespread application in utility-scale power conversion, rail traction and medical equipment. Successful implementation of the proposed technology will dramatically improve the performance and reliability of power electronics in renewable energy applications and Smart Grid elements. This in turn will increase market acceptance of these high-end products and thereby drive jobs creation in the US.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce

Agency intelligence

Department of Energy

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