SBIR/STTR Research Award
Development of GaN Substrates for High Power and Multi-Functional Devices
Award amount
$723,742Program and phase
SBIR · Phase IIAward year
2012Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2012-08-07
- Contract end date
- 2014-08-06
- UEI
- GDV6R1VLRVN7
- Solicitation number
- 2009.2
- Topic code
- A09-045
Research abstract
Gallium nitride (GaN) substrates are a critical component in the roadmap of power efficient and high frequency electronic devices in the coming years. One major hurdle of this technology is the limited availability of large diameter, high quality substrates for large scale device fabrication. Under this effort, Kyma will work with partners to produce larger and more device consistent wafers for device proof of concept and testing.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of GaN Substrates for High Power and M
- Development of GaN Substrates for High Power and M
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration