Sub65nm BMDS Electronics by Direct Write FIB

NexGenSemi Corporation (NGSC) is presenting a co-processing method to manufacture highly leveraged BMDS electronics with BAE Systems and Vanderbilt University, Institute for Space Defense Electronics (VU ISDE). Working with VU ISDE"s group to design, model and simulate specialty electronics and BAE Systems Manassas Foundry, NGSC will provide a unique high energy, direct write FIB solution for patterned implant. The resistless, maskless solution allows low-cost, custom modifications to be applied within the node, circuit, die, or wafer. NGSC will demonstrate high resolution registration techniques supporting manufacturing down to the 65nm node. Custom modifications will open the door for specific applications within on SM-3 Block II requirements. The proposed effort includes two co-process wafer runs with an option to apply this unique technology to BMDS within the estimated Q2-2013 timeframe.