Sub65nm RH Annular Devices by Direct Write FIB

NexGenSemi Corporation is presenting a manufacturing method for high resolution pattering of annular devices at “state-of-the-art”, sub 65 nm geometry nodes. The company will work with Vanderbilt University/ISDE Group design and model the annular device physical structures that will be processed in phase II. Using high resolution Direct Write Focused Ion Beam Lithography (DWFIB), NexGenSemi shall develop pattern generation exposure files from ISDEs design, demonstrate high resolution registration techniques and establish beam profiles supporting for Phase II device fabrication. A feasibility study of this Executive Order 13329 compliant advanced manufacturing technique will be provided as the outcome of the program. The feasibility study includes the necessary preparation analysis for Phase II hardware demonstration by providing annular device design data, device models, CAD files, process models, DWFIB beam parameters and throughput models. The project will determine the manufacturing feasibility by DWFIB of annular device as a solution for Ballistic Missile Defense Systems (BMDS).