AlInGaN MOSHFET Power Converters
Award amount
$99,673Program and phase
SBIR · Phase IAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2009-03-27
- Contract end date
- 2009-09-27
- UEI
- ZLAMG4KBKN15
- Solicitation number
- 2008.3
- Topic code
- MDA08-029
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters
- High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies
- High-Voltage and High-Frequency Power Switch for Next Generation Transmit Receiver Module Power Supplies
- GaN-based Schottky Diodes for Power Converters in X-band Radar Power Supplies
- Wide Bandgap Semiconductor Power Inverters and Converters for Next Generation Transmit Receive (T/R) Module Power Supplies
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture