SBIR/STTR Research Award

GaN-based Schottky Diodes for Power Converters in X-band Radar Power Supplies

Award identifier 340c33356af3551c305479bba774091890fd32af0531b5915e429e3fb9e8640fAwarding agency Department of Defense · Missile Defense Agency

Award amount

$99,970

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
KYMA TECHNOLOGIES, INC.
Proposal award date
2009-03-27
Contract end date
2009-09-27
UEI
GDV6R1VLRVN7
Solicitation number
2008.3
Topic code
MDA08-029

Research abstract

Kyma Technologies proposes to develop high performance GaN-based Schottky barrier diodes (SBDs) using high quality native GaN substrates. The inherent properties of the native substrate and the high quality epitaxy will enable novel technology advances beyond the current GaN SBD state of the art, and these devices will benefit power converters in X-band radar power supplies through fast, low-loss switching capabilities. Kyma will leverage existing partnerships with highly experienced research teams at North Carolina State University and Auburn University for device epitaxy and processing, respectively.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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