SBIR/STTR Research Award
An Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors
Award amount
$69,960Program and phase
SBIR · Phase IAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- IRDT Solutions, Inc
- Proposal award date
- 2010-07-02
- Contract end date
- 2011-01-02
- UEI
- CM79JETRFLC5
- Solicitation number
- 2010.1
- Topic code
- A10-022
Research abstract
Phase I objective includes completion of the Engineering design of the HgCdTe annealing apparatus and to deliver a sufficiently complete schematic design to the Government for their evaluation. Phase II plan entails building and delivering the annealing apparatus to anneal 3-inch large HgCdTe wafers.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High Operating Temperature Long Wave HgCdTe Focal Plane Arrays
- Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
- An improved passivation process for the fabrication of high performance antimony based III-V superlattice materials
- Dislocation reduction in LWIR HgCdTe epitaxial layers grown on alternate substrates
- Defect Reduction Techniques for Large Format Infrared Detector Materials
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors
- Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors
- Innovative Annealing Apparatus for Mercury-Based, Compound Semiconductors
Research funding history
7 SBIR/STTR records share this UEI (2010–2015). Reported award amounts total $1,139,371. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense