SBIR/STTR Research Award
Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Award amount
$746,724Program and phase
SBIR · Phase IIAward year
2009Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2009-09-08
- Contract end date
- 2012-09-15
- UEI
- ZLAMG4KBKN15
- Solicitation number
- 2007.2
- Topic code
- N07-147
Research abstract
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Due to extremely high electron density in the 2D channel formed at the AlGaN/GaN interface, III-Nitride HFET - based RF switches offer low insertion loss, lower than that of pin diodes and quite comparable to that achievable with MEMS switches. As compared to MEMS and other switch types, III-N HFET switches have much higher switching powers, shorter switching times, excellent temperature stability. Importantly, the HFET performance is expected to actually improve at cryogenic temperatures.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Microwave switches for cryogenically cooled RF receivers
- Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture