SBIR/STTR Research Award
Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
Award amount
$99,885Program and phase
SBIR · Phase IAward year
2007Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2007-11-07
- Contract end date
- 2008-09-07
- UEI
- ZLAMG4KBKN15
- Solicitation number
- 2007.2
- Topic code
- N07-147
Research abstract
We propose to carry out research and development of highly efficient broadband cryogenic switches using voltage controlled 2D electron gas in III-Nitride heterostructure field-effect transistors (HFETs). Unlike RF switches based on regular semiconductor devices, key characteristics of properly designed III-Nitride HFET - based RF switches will actually improve at cryogenic temperatures. These include insertion loss, maximum switching powers, switching times and others.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Low-loss High-power Cryogenic RF Switches using III-Nitride MOSHFETs
- Microwave switches for cryogenically cooled RF receivers
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture