SBIR/STTR Research Award

VLWIR HgCdTe FPA Reliability and Yield Enhancement through Nanostructural Analysis

Award identifier 265e93fcabd00d65c71ec2d9d6aa1d80cd0d859b430f37b05f1562c353f8cbeaAwarding agency Department of Defense · Missile Defense Agency

Award amount

$99,998

Program and phase

SBIR · Phase I

Award year

2009

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
FABMETRIX INC
Proposal award date
2009-03-27
Contract end date
2009-09-27
UEI
KALUKJ7E3644
Solicitation number
2008.3
Topic code
MDA08-013

Research abstract

This Phase I proposal seeks to demonstrate the feasibility of characterizing the depletion region of a VLWIR HgCdTe photodiode in plan-view and in nano-scale to detect and study the structural anomalies responsible for the current leakage and other operability issues. Our related preliminary work on a test photodiode has already identified crystalline defects and secondary phase precipitates within the depletion region and has detected strain fields at its passivation interface. In Phase II, we plan to develop and deploy the above and similar methodologies in a systematic and routine manner in a VLWIR HgCdTe IRFPA manufacturing environment for product reliability and yield enhancement.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

7 SBIR/STTR records share this UEI (2009–2020). Reported award amounts total $3,632,270. Reported amounts are not federal obligations.

Phases: Phase II, Phase I

Agencies: Department of Defense

Agency intelligence

Department of Defense

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