VLWIR HgCdTe FPA Reliability and Yield Enhancement through Nanostructural Analysis
Award amount
$983,746Program and phase
SBIR · Phase IIAward year
2010Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- FABMETRIX INC
- Proposal award date
- 2010-12-22
- Contract end date
- 2012-12-23
- UEI
- KALUKJ7E3644
- Solicitation number
- 2008.3
- Topic code
- MDA08-013
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- CHARGE COLLECTION SCANNING TRANSMISSION ELECTRON MICROSCOPY FOR ADVANCED INFRARED SEMICONDUCTOR DEVICES
- Charge collection scanning transmission electron microscopy for advanced infrared semiconductor devices
- Electronic Component Fingerprinting to Determine Manufacturing Origin
- A Rapid and Cost-Effective Approach to Nanostructural Analysis of Semiconductor Devices
- VLWIR HgCdTe FPA Reliability and Yield Enhancement through Nanostructural Analysis
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Design Modified Commercial CMOS for MDA IR FPAs
- Growth of Large Area CZT Crystals
- Advanced Space Sensor Components and Concepts
- Design Modified Commercial CMOS for MDA IR FPAs
- Growth of Large Area CZT Crystals
Research funding history
7 SBIR/STTR records share this UEI (2009–2020). Reported award amounts total $3,632,270. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense