SBIR/STTR Research Award
Ultra-Dense Three-Dimensional Electronics for Space
Award amount
$100,000Program and phase
SBIR · Phase IAward year
2008Award details
- Awarding agency
- Department of Defense
- Branch
- Air Force
- Recipient company
- NHANCED SEMICONDUCTORS, INC.
- Proposal award date
- 2008-01-15
- Contract end date
- 2009-01-15
- UEI
- LATHGF1NRTC1
- Solicitation number
- 2007.3
- Topic code
- AF073-099
Research abstract
Tezzaron proposes the development of a 3D integrated memory on processor or host device. The proposed device is made from a very high-performance 3D integrated 512Mb DRAM memory device and a structured array with single layer customization. Both devices in the ultimate 3D integration have a high degree of radiation hardness and also have low power and an ultra-compact form factor.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- CMOS Integrated With Float Zone Pixel Sensor
- Micro-Transfer-Printing Of Repeaters On Passive Interposer
- Energy-Efficient Reconfigurable Universal Accelerator Interconnect
- CMOS Integrated With Float Zone Pixel Sensor
- A New Cost-Effective Engineered Substrate
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Ultra-Dense Three-Dimensional Electronics for Space
- Integrating Field Programmable Passive and Gate Arrays (Passive Brick Concept)
- Ultra-Dense Three-Dimensional Electronics for Space
- Scalable Hyper-Thinning of Si for Three-Dimensional Space Electronics
- Ultra-Dense Three-Dimensional Electronics for Space
Research funding history
21 SBIR/STTR records share this UEI (2008–2021). Reported award amounts total $9,451,098. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration