SBIR/STTR Research Award
Materials Development in GaN for Non-polar Substrates Sliced From Bulk Crystals
Award amount
$749,999Program and phase
STTR · Phase IIAward year
2007Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2007-09-11
- Contract end date
- 2008-09-09
- UEI
- GDV6R1VLRVN7
- Solicitation number
- Not reported
- Topic code
- A06-T019
Research abstract
Kyma Technologies will team with North Carolina State University to develop growth techniques using the hydride vapor phase epitaxy technique to fabricate large area non-polar GaN substrates. Using high quality non-polar seed crystals developed during the Phase I effort, the HVPE growth process will be optimized to increase the GaN crystal size and result in large area substrates. Kyma will perform the crystal growth and materials characterization; North Carolina State University will perform MOCVD growth and materials characterization, in addition to developing a growth model relating Kyma's physical-chemical growth parameters to atomic growth phenomena.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
- Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
- Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
- Materials Development in GaN for Non-polar Substrates Sliced From Bulk Crystals
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration