SBIR/STTR Research Award
Materials Development in GaN for Non-polar Substrates Sliced From Bulk Crystals
Award amount
$100,000Program and phase
STTR · Phase IAward year
2006Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- KYMA TECHNOLOGIES, INC.
- Proposal award date
- 2006-08-15
- Contract end date
- 2007-02-11
- UEI
- GDV6R1VLRVN7
- Solicitation number
- Not reported
- Topic code
- A06-T019
Research abstract
Kyma Technologies will lead a team of researchers in the development and optimization of bulk GaN crystal growth processes for fabricating non-polar GaN substrates. Processes for extended growth of GaN crystals in the c-axis direction will be developed to fabricate non-polar and semi-polar substrates of selected orientations. This approach will be compared to heteroepitaxial growth in non-polar directions on non-native seed materials. Bulk non-polar substrates will be demonstrated and characterized, and an in-depth cost analysis of the manufacturing approach for large area substrates will be undertaken.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Low-Cost Manufacturing of High Quality GaN Substrates
- Pulsed Sputter Deposition (PSD) for Efficient Doping for GaN HEMT Contacts
- HVPE-Based Gallium Oxide Epiwafer Development
- High Responsivity Optical GaN Switch
- Radiation-Tolerant Vertical GaN Diodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
- Materials Development in GaN for Non-polar Substrates Sliced From Bulk Crystals
- Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
- Development of On-Demand Non-Polar and Semi-Polar Bulk Gallium Nitride Materials for Next Generation Electronic and Optoelectronic Devices
Research funding history
83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration