Low Defect LWIR Substrates by Detached Growth Method
Award amount
$1,704,270Program and phase
SBIR · Phase IIAward year
2007Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- CAPESYM INC
- Proposal award date
- 2007-07-18
- Contract end date
- 2009-07-18
- UEI
- CSZST8YFP7K1
- Solicitation number
- 2005.3
- Topic code
- MDA05-008
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- High-Resolution Direct-Conversion X-ray Detectors for Low-Dose Imaging
- Crystal Growth and Characterization of Doped VUV Crystals
- Low-Cost High-Efficiency X-ray Imaging Panels for Field Radiography
- High Yield Growth and Fabrication of Spectroscopic Radiation Detection Semiconductors
- High Quantum Efficiency Scintillators for Dual Readout Calorimetry
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Lattice Matched Substrates for Mercury Cadmium Telluride growth by MBE
- Lattice Matched Substrates for Mercury Cadmium Telluride growth by MBE
- Low Defect LWIR Substrates by the Detached Growth Method
Research funding history
85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration