SBIR/STTR Research Award

Low Defect LWIR Substrates by the Detached Growth Method

Award identifier c67fcda4c66c00652a5fef5f48ed71bd1de06192f7538d4dc3ba4ad56c2c2cffAwarding agency Department of Defense · Missile Defense Agency

Award amount

$99,891

Program and phase

SBIR · Phase I

Award year

2006

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
CAPESYM INC
Proposal award date
2006-03-03
Contract end date
2006-09-03
UEI
CSZST8YFP7K1
Solicitation number
2005.3
Topic code
MDA05-008

Research abstract

This proposal is focused on the development of a novel method for the growth of low-dislocation-density, high-purity, and low-precipitate-concentration CdZnTe and CdSeTe crystals for use as substrates for MCT detectors. This work is motivated by the observation that II-VI compound semiconductors grown detached from the containment wall in space, as well as other materials grown on earth, have exhibited significantly lower dislocation density and higher purity. This program will seek to grow detached Cd(Zn,Se)Te crystals through the development of a feedback-controlled detached growth process, where the signals generated by a non-intrusive sensor are used to maintain a detachment gap of the order of 50-100 microns between the growing crystal and the ampoule.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

85 SBIR/STTR records share this UEI (1997–2025). Reported award amounts total $46,105,917. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, Department of Energy, Department of Homeland Security, Department of Health and Human Services, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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