SiC Arrayed Detectors for Fast Neutron Detection
Award amount
$99,998Program and phase
SBIR · Phase IAward year
2007Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Threat Reduction Agency
- Recipient company
- GENESIC SEMICONDUCTOR INC.
- Proposal award date
- 2007-05-31
- Contract end date
- 2007-11-29
- UEI
- DV7NF6NE49J6
- Solicitation number
- 2007.1
- Topic code
- DTRA07-001
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation
- 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry
- Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers
- Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities
- Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
Research funding history
41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce