Novel Rapid and Low Damage Mechanical Polishing Method for Low Cost and Volume Manufacturing of 100mm SiC Substrates

The extremely long and multiple polishing steps represent one of the critical challenges for affordable, volume production of high quality 100 mm SiC wafers. As SiC is relatively chemically inert and mechanically hard, aggressive polishing methods involving very hard particles have been used to achieve high removal rates, but such methods create a high degree of sub-surface damage and scratches. To significantly reduce the manufacturing costs, novel high removal rate and low sub-surface mechanical polishing processes need to be developed. Sinmat proposes to develop a novel mechanical polishing process based on novel nanoparticles that will significantly enhance polishing rates, while at the same time reducing the sub-surface damage. These nanoparticles are expected to combine high hardness with “chemical tooth” capability to achieve high removal rates with low concomitant surface damage. The successful development of such as process is expected to significantly shorten the chemical mechanical planarization (CMP) step and related manufacturing costs. In the Phase I of the SBIR project, feasibility studies will be conducted on small substrates, while in the Phase II this process will be extended to 100 mm silicon carbide substrates.