SBIR/STTR Research Award

Development of Seeded Crystal Growth Processes for Large Area Semi-insulating Gallium Nitride Substrates

Award identifier 9b160b7b0e80e7e1889d720c730d9a03ff41393b06a0cc8199244cd15e013fe3Awarding agency Department of Defense · Missile Defense Agency

Award amount

$100,000

Program and phase

SBIR · Phase I

Award year

2007

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
KYMA TECHNOLOGIES, INC.
Proposal award date
2007-03-27
Contract end date
2007-09-27
UEI
GDV6R1VLRVN7
Solicitation number
2006.3
Topic code
MDA06-035

Research abstract

Kyma Technologies will explore aspects of seeded bulk GaN crystal growth to develop manufacturing processes for large area, high quality, semi-insulating GaN substrates for RF applications. Preparation of GaN seeds and growth thereon, including surface cleaning, off-cut angle and direction, growth initiation, and defect control will be investigated. The use of novel seeds and growth conditions will be examined to expand the crystal size during growth. These substrates are expected to improve the performance and reliability of GaN-based power amplifiers for X-band radar applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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