SBIR/STTR Research Award

Development of Seeded Crystal Growth Processes for Large Area Semi-insulating Gallium Nitride Substrates

Award identifier 369512fa33c4c9fb3039421b9c2b2e674598ab7eb8379e04c75a02ab38822d1dAwarding agency Department of Defense · Missile Defense Agency

Award amount

$999,993

Program and phase

SBIR · Phase II

Award year

2008

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
KYMA TECHNOLOGIES, INC.
Proposal award date
2008-04-18
Contract end date
2010-04-18
UEI
GDV6R1VLRVN7
Solicitation number
2006.3
Topic code
MDA06-035

Research abstract

In this Phase II effort, Kyma will explore aspects of seeded bulk GaN crystal growth to develop manufacturing processes for large area, high quality, semi-insulating GaN substrates for RF applications. Optimization of several aspects of the growth process will be investigated to develop a process for high quality regrowth addressing known issues identified in the Phase I effort. Growth optimization will result in high quality crystals with the goal of obtaining multiple substrates with well-controlled material and electrical properties.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Awards with the same topic code

Verified by an exact topic code match. This is not a text-similarity match.

Research funding history

83 SBIR/STTR records share this UEI (2000–2024). Reported award amounts total $34,128,798. Reported amounts are not federal obligations.

Phases: Phase I, Phase II, Phase II – Direct to Phase II

Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration

Agency intelligence

Department of Defense

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