Advancing Radiation-Hardened GaN Manufacturing: Ultra-High Vacuum Process Development and Space-Based Scalability

Modern military, aerospace, and satellite systems demand high-performance, radiation-hardened semiconductor devices to ensure operational reliability in extreme environments. Gallium Nitride (GaN) has become a critical material for power electronics and radio-frequency (RF) components due to its superior electrical and thermal properties. However, achieving radiation-hardened GaN with high yield and low defect density remains a significant challenge due to contamination risks, high production costs, and limitations of terrestrial fabrication environments.ÝBesxar Space Industries proposes leveraging ultra-high vacuum (UHV) conditions, accessible in space, to develop a scalable, space-based GaN manufacturing process. This approach mitigates contamination-induced defects, enhances material purity, and improves radiation resilience by optimizing GaN crystal growth. By integrating autonomous orbital fabrication modules, Besxar aims to demonstrate the feasibility of in-space GaN production, yielding devices with higher breakdown voltages, lower power losses, and superior resistance to Total Ionizing Dose (TID) and Single Event Effects (SEE).ÝPhase I will focus on validating UHV-based GaN fabrication through a ground-based test platform simulating space conditions. Key objectives include defining optimal GaN growth processes for radiation hardness, quantifying defect density improvements, fabricating proof-of-concept GaN test wafers, and modeling thermal and power efficiency gains. The effort will culminate in a risk assessment and roadmap for Phase II, targeting a functional on-orbit pilot demonstration.ÝSuccessful execution of this project will support the U.S. Defense Industrial Base by securing a domestic, space-enabled supply chain for radiation-hardened semiconductors, enhancing the resilience and capability of next-generation defense, aerospace, and high-performance computing applications.