Radiation Hardening of Gallium Nitride Power HEMTs

Power electronic systems utilizing wide bandgap devices (such as Gallium Nitride (GaN)) provide major improvements in Size, Weight, and Power (SWaP) over systems using Silicon (Si) devices. GaN High Electron Mobility Transistors (HEMTs) have mixed radiation and reliability performance compared with Si devices. GaN devices suitable for DoD applications are also not yet available with a domestic supply chain.ÝRugged MicroPower seeks to establish on-shore, radiation-hardened-by-design (RHBD) capability in a commercially-available, 180nm GaN power technology. ÝThe commercial technology will be characterized for baseline susceptibility to radiation effects, particularly Single Event Effects (SEE) using Pulsed Laser (PL) stimulus. Radiation response models will be developed and calibrated using the PL SEE test results. Optional fabrication process steps will be identified, and candidate test devices will be designed in preparation for later fabrication. ÝFinally, radiation models will be extended to include effects such as Total Ionizing Dose (TID), Displacement Damage Dose (DDD), and high-rate doses.