SBIR/STTR Research Award
Radiation Hardened Gallium Nitride Electronics
Award amount
$139,906Program and phase
SBIR · Phase IAward year
2025Award details
- Awarding agency
- Department of Defense
- Branch
- Navy
- Recipient company
- RELIABLE MICROSYSTEMS LLC
- Proposal award date
- 2025-08-01
- Contract end date
- 2026-01-28
- UEI
- D1M6RD37EYQ4
- Solicitation number
- 25.1
- Topic code
- N251-067
Research abstract
Reliable MicroSystems proposed solution for radiation-hardened GaN devices and circuits leverages decades of experience in radiation-hardened-by-design technique and radiation-enabled modeling and simulation development, demonstration, and deployment. Radiation characterization test data of the baseline GlobalFoundries High-Voltage GaN technology will further inform the RHBD techniques and radiation-enabled engineering models developed in this Phase I activity. The support of GlobalFoundries, a high-volume, commercial manufacturer of GaN-on-Si in a CONUS fab with a path to DMEA trusted status, the transition from Phase I to prototype hardware in Phase II will be accelerated.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Hierarchical, Layout-Aware, Radiation Effects Tools Vertically Integrated into an EDA Design Flow for Seamless Rad-Hard by Design
- Integrated Complementary Metal Oxide Semiconductor Nuclear Event Detector for System on a Chip Applications
- Integrated CMOS Nuclear Event Detector Using on-Chip, Programmable Photocurrent Monitoring Circuitry
- Hierarchical, Layout-Aware, Radiation Effects Tools Vertically Integrated into an EDA Design Flow for Rad-Hard by Design
- Innovative Mitigation of Radiation Effects in Advanced Technology Nodes
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Radiation Hardened Gallium Nitride Devices for RF Amplifiers
- Radiation Hardening of Gallium Nitride Power HEMTs
- Radiation Hardened GaN Monolithic Integrated Circuits for Power Conversion
- Advancing Radiation-Hardened GaN Manufacturing: Ultra-High Vacuum Process Development and Space-Based Scalability
Research funding history
6 SBIR/STTR records share this UEI (2016–2025). Reported award amounts total $3,545,879. Reported amounts are not federal obligations.
Phases: Phase II, Phase I
Agencies: Department of Defense