Organic Based Flexible Transistors and Electronic Devices

Objective The objective of this project is to develop an organic solution-based CMOS process capable of producing printed RFID tags. Key to this objective is to optimize the n-type semiconductor and dielectric materials developed in Phase I, and to integrate these materials into a complete process line. The Approach CMOS utilizes p-type and n-type transistors to significantly reduce static power dissipation while increasing the performance of circuitry by an order of magnitude greater than the p-type (or n-type) counterpart alone. We propose to develop and implement an end-to-end process line which is capable of fabricating commercial product at target costs. This will be a collaborative effort wherein Northwestern University optimizes the n-type material and dielectric sets that have been explored in Phase I, the University of Texas enhances the performance and manufacturability of n-type transistors based on the device physics elucidated in Phase I, and OrganicID integrates those materials to form a complete CMOS process. A number of fabricated design structures are proposed as a demonstration vehicle, including a simplified RFID tag operating at 13.56MHz. The approach to the enabling n-type materials will be to optimize film growth processes for structures having electron-withdrawing groups and other substituents to drastically lower highest occupied molecular orbital energies (stabilizing injected electrons) and planar, extended electronic conjugation pathways to optimize close intermolecular packing and charge mobility. Dielectric materials will be optimized for low leakage, high dielectric breakdown strength, high capacitance, good environmental and mechanical stability, compatibility with both n- and p-type semiconductors, ease of uniform film growth, and compatibility with a variety of organic transistor electrodes and electrode configurations.