High Power Microwave Limiters based on GaN Technology

We propose to develop power limiter based on Schottky diodes over AlGaN/GaN structure. The limiters would have the capability to integrate with AlGaN/GaN transistors, which is a good candidate for next-generation power amplifiers. The microwave noise behavior of GaN-based transistors is also similar to the best GaAs transistors. Thus, the power limiters together with GaN-based LNA will serve as a robust receiver which can be put close to the high-power amplifiers. GaN material systems have been under intense investigation in the last ten years due to its high breakdown field and high temperature operation. GaN transistors operating up to 600C is available in reports from various researchers. The devices and circuits will prove their potential for modern military demand of high power microwave limiters.