SBIR/STTR Research Award
Preparation of ultra-low defect AlN surfaces for OMVPE
Award amount
$98,971Program and phase
SBIR · Phase IAward year
2004Award details
- Awarding agency
- Department of Defense
- Branch
- Army
- Recipient company
- Crystal IS, Inc.
- Proposal award date
- 2004-02-02
- Contract end date
- 2004-10-03
- UEI
- Not reported
- Solicitation number
- 2003.2
- Topic code
- SB032-044
Research abstract
Now that very low defect density (<1,000 dislocations per sq. cm.) native AlN substrates are available from Crystal IS, it may be possible to realize nitride device applications with high Al content where low defect densities are critical.. However, to realize this potential, a systematic effort to provide improved and reliable surface preparation of aluminum nitride substrates prior to the OMVPE growth of nitride epitaxial layers is needed. This need will be addressed by the proposed effort.
Technology keywords
Not reported
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
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