Thick SiC Epitaxy Development for MegaWatt Switching Applications

In this proposed work, methods to increase the growth rate for thick, low-doped drift region epilayers required for MW power switch devices are examined. Changing the process parameters (carrier and feed gas ratios, gas flow rates, pressure, temperature) to increase the growth rate are balanced with keeping process parameters such that surface morphology is not compromised is the primary goal of this work. Additionally, maintaining dopant control, low background impurity, and the possibility of closing micropipe defects are examined to maintain the quality of the thick epitaxy layers. This work is done in a horizontal configuration reactor, designed for SiC epitaxy growth.