SBIR/STTR Research Award
Large Periphery AllnGaN-Gan MOSHFET Device For High Power X-Band Microwave Amplifiers
Award amount
$908,800Program and phase
SBIR · Phase IIAward year
2005Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Sensor Electronic Technology, Inc.
- Proposal award date
- 2001-06-27
- Contract end date
- 2003-02-28
- UEI
- ZLAMG4KBKN15
- Solicitation number
- 2000.3
- Topic code
- MDA00-014
Research abstract
We propose to develop submicron gate large periphery AllnGaN-Gan based metal-oxide semiconductor heterojunction field-effect transistors (MOSHFET) as a building block for high-power (>20W), high frequency (x-band) amplifiers.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- GaN High-Power Low-Loss C3-varactor RF switch MMIC
- Scalable, Wide Bandgap Integrated Circuit Technology for Wide Temperature, Harsh Environment Applications
- AlInN/GaN HFET over Free-Standing bulk GaN substrates
- Ultraviolet Communication for Medical Applications
- Normally-OFF AlInN/GaN MISHFET with composite channel
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Silicon Carbide Bulk Crystal Growth at High Growth Rates
- Active Photonic Crystals for Wave Division Multiplexing Applications
Research funding history
80 SBIR/STTR records share this UEI (1984–2014). Reported award amounts total $19,732,151. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense, National Science Foundation, Department of Health and Human Services, National Aeronautics and Space Administration, Department of Agriculture