Silicon Carbide Optically Gate Solid State Power Switch
Award amount
$750,000Program and phase
STTR · Phase IIAward year
2008Award details
- Awarding agency
- Department of Energy
- Branch
- Not reported
- Recipient company
- GENESIC SEMICONDUCTOR INC.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- DV7NF6NE49J6
- Solicitation number
- DE-PS02-08ER08-17
- Topic code
- 32a
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation
- 4H-SiC BiCMOS Development on 6â wafers in a High-Volume Production Foundry
- Automotive-qualified SiC DMOSFETs with integrated Schottky Rectifiers
- Advanced Power Conversion Systems featuring SiC MOSFETs with In-Situ Restoration Capabilities
- Automotive-qualified 3300 V SiC MOSFETs for next-generation extreme fast chargers
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- Spatial Excitation Emission Matrix Spectroscopy instrument (SEEMs)
- Real-time Volumetric IR Absorption Nanoscope for in-situ Study of Plant/Microbe Interaction and Metabolism, 32a
- Quantifying the algal metabolome through photothermal microscopy
- An ultra-sensitive dual Fluorescence and Bright Field Imaging Lensless Microscopy system using the novel Quanta Image Sensor for Bio-imaging.
- Digital Data Acquisition with High Resolution and Linearity
Research funding history
41 SBIR/STTR records share this UEI (2006–2021). Reported award amounts total $20,963,272. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Energy, Department of Defense, National Aeronautics and Space Administration, Department of Commerce