Integrated Photonic Modulator on Chip

As an alternative to fabricating modulators in semiconductors such as silicon or in conventional inorganic materials, thin-film lithium niobate on silicon (TFLN-on-Si) has emerged as a promising platform due to its favorable electro-optic properties, high bandwidth potential, and compatibility for integration with other components – both electronic and photonic – onto or within a silicon chip. This proposal outlines an SBIR program in which we intend to develop a Mach-Zehnder (MZ) intensity modulator chip – most likely in TFLN-on-Si, having performance that meets Air Force specifications across the 0.98 – 2.2 micron wavelength range.  The chip will be designed and simulated in Phase I, fabricated, tested and refined in Phase II, and packaged in Phase III in a manner that supports high-volume production.