SBIR/STTR Research Award

SBIR Phase I: Highly Efficient Exhaust Cleanup Technology for Environmentally Benign Processing

Award identifier d3117c6dcbfd09b70a9c0d1eee9479625d3ffc7b6f4f463a9ce87404dc973bf8Awarding agency National Science Foundation

Award amount

$99,980

Program and phase

SBIR · Phase I

Award year

2004

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
SUNDEW TECHNOLOGIES LLC
Proposal award date
Not reported
Contract end date
Not reported
UEI
Q4JJMNHWLNU4
Solicitation number
NSF 03-535
Topic code
AM

Research abstract

This Small Business Innovation Research (SBIR) Phase I project will develop a novel integrated reactive abatement module (IRAM) that effectively removes solidifying chemicals from the exhaust effluent of deposition and etch manufacturing processes. Growing safety concerns and escalating costs dedicated to environmental protection is one of the drivers to continuously migrate semiconductor manufacturing outside of the US. In this project, hazardous chemicals will be reactively converted into inert solid films over a removable high-area filtration element. An integrated high-speed downstream pressure control will actively suppress IRAM-induced pressure fluctuations that may affect the process. The reactive process will apply highly effective chemical reactions to convert the solidifying chemicals into stable inert films. Objectives include superior maintainability of low-pressure exhaust manifolds and pumps and substantially improved safety of device processing systems, hence promoting safe and environmentally benign semiconductor manufacturing at a competitive cost. Broader impact: Chemical Vapor Deposition (CVD), Atomic Layer Deposition (ALD) and Reactive Ion Etching (RIE) are considered the cornerstones of semiconductor manufacturing technology. In the last decade these manufacturing-technologies have also migrated into the explosively growing area of nano-technology. These process techniques emit reactive, toxic and solidifying chemicals and produce a hazardous and destructive residue in low-pressure exhaust manifolds that clogs up the conduits and destroys the vacuum pumps. Slow and inefficient chemical reactions, driven by the typically low pressure and low temperature conditions in exhaust manifolds, convert the reactive exhaust mixture into hazardous residue instead of completely reacted inert films. Frequent maintenance requires ambient exposure of these hazardous-residue-containing exhaust manifolds with risks to the workers and the workplace. Growing safety concerns and escalating cost dedicated to environmental protection severely hampers the semiconductor industry and reduces its competitiveness in the US. Overcoming this deficiency, IRAM technology will apply environmentally benign chemistry with a localized production of short-lived highly reactive species capable to completely extracting the solidifying chemicals out of exhaust streams to produce inert solid films. This novel chemistry has a broad range of device processing applications and can positively impact manufacturing costs. Key Words: CVD, RIE, ALD, abatement, semiconductor manufacturing, LPCVD, foreline, EH&S, environmental health and safety. E.B.A 5/24/04

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

13 SBIR/STTR records share this UEI (2002–2017). Reported award amounts total $8,016,595. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation

Agency intelligence

National Science Foundation

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