Silicon Carbide Optically Gate Solid State Power Switch

Traditional power semiconductor devices, such as those used in radio frequency acceleration structures for high energy physics research, have been extensively used as pulsed-power switches. For optical switches, however, the key research problem is designing a suitable device structure that can address the multi-faceted performance demands. This project will design, fabricate, and characterize a high-gain, high-breakdown-voltage, high-temperature-sustainable, non-latched, conductivity-modulated, SiC-based vertical Optically-Gated High-power Solid-state Switch (SiC-OGHSS) for electromagnetic-interference (EMI) immune and optically-isolated pulsed-power applications. The SiC-OGHSS will: (1) be structurally more complex than traditional photoconductive pulsed-power switches; (2) support high current pulses (1 kA) at voltage level of 2 kV, with switching times less than 300 nsec; and (3) handle very high di/dt (40 kA/microsecond) at low duty cycle ( 2 kA), and the device gain. Commercial Applications and other Benefits as described by the awardee: The SiC-OGHSS technology should lead to a new product line in power components, and a number of large aerospace companies already have expressed interest. The worldwide market revenue for discrete power devices is predicted to be over 16 billion dollars, with a market growth rate that has averaged a very robust 15 percent per year since 2001.