SiClever MOM: AI-Driven Platform for Modeling, Optimization, and Monitoring (MOM) of Silicon Carbide Growth

Silicon Carbide (SiC) has become a key material for advanced power electronics due to its superior properties, including a wide bandgap and high breakdown electric field. However, challenges persist in efficiently starting and optimizing the chemical vapor deposition based SiC epitaxial growth process, particularly in producing thick epilayers on large wafers. To address this, AsterTech proposes developing the SiClever MOM platform: an AI-driven system for Modeling, Optimization, and Monitoring of SiC epitaxy growth. In this SBIR Phase I project, we will develop a foundational AI/ML component of the platform, utilizing historical data and simulations to optimize process parameters and demonstrate an initial proof-of-concept. In Phase II, we will enhance the accuracy of our AI/ML model using Design of Experiment (DoE) data, build additional components of the platform, develop control algorithms to auto-correct process drift, and integrate the platform into a DMEA-preferred environment.