In-Situ Epitaxial Defect Reduction with Augmented Instrumentation and Intelligent Control
Award amount
$99,999Program and phase
SBIR · Phase IAward year
2025Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- MAINSTREAM ENGINEERING CORP
- Proposal award date
- 2025-02-05
- Contract end date
- 2025-05-07
- UEI
- YR8FJBGXWRR1
- Solicitation number
- 24.4
- Topic code
- DMEA244-P01
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Magnetic Bearings for Cryogenic Fluid Management
- Rapid ASCENT Propellant Loading Operations
- On-Demand Repair Part Manufacturing with MRAM
- Extremely Uniform, High Quality, and Isotopically Pure SiC Epiwafers for Quantum
- Compact, Deployable Water Purification System
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- SiClever MOM: AI-Driven Platform for Modeling, Optimization, and Monitoring (MOM) of Silicon Carbide Growth
- Fast ANd Trustwordy AI-powered growth of Thick SiC epi (FANTATSIC)
- Tignis - DMEA244-P01
- Software Tool for Modeling, Simulation, Optimization, and Monitoring of Thick SiC Epitaxy Processes at the Multi-User Silicon Carbide (MUSIC) Foundry
- Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic
Research funding history
518 SBIR/STTR records share this UEI (1987–2025). Reported award amounts total $184,860,329. Reported amounts are not federal obligations.
Phases: Phase I, Phase II, Phase II – Direct to Phase II
Agencies: Department of Defense, Department of Energy, National Aeronautics and Space Administration, Department of Transportation, Department of Health and Human Services, Environmental Protection Agency