Fast ANd Trustwordy AI-powered growth of Thick SiC epi (FANTATSIC)
Award amount
$95,580Program and phase
SBIR · Phase IAward year
2025Award details
- Awarding agency
- Department of Defense
- Branch
- Defense Microelectronics Activity
- Recipient company
- TRUENANO, INC.
- Proposal award date
- 2025-02-01
- Contract end date
- 2025-05-07
- UEI
- F45QZBNBW4G6
- Solicitation number
- 24.4
- Topic code
- DMEA244-P01
Research abstract
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Hot Filament CVD Technology for disruptive, high throughput SiC epitaxial growth reactors
- Hot Filament CVD technology for disruptive, high-throughput SiC epitaxial growth reactors
- THz and Sub-THz MEMS-Fabricated Klystron Amplifier
- High-Voltage SiC Switch with Nanosecond Response Time
Awards with the same topic code
Verified by an exact topic code match. This is not a text-similarity match.
- SiClever MOM: AI-Driven Platform for Modeling, Optimization, and Monitoring (MOM) of Silicon Carbide Growth
- Tignis - DMEA244-P01
- Software Tool for Modeling, Simulation, Optimization, and Monitoring of Thick SiC Epitaxy Processes at the Multi-User Silicon Carbide (MUSIC) Foundry
- Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic
- In-Situ Epitaxial Defect Reduction with Augmented Instrumentation and Intelligent Control
Research funding history
5 SBIR/STTR records share this UEI (2008–2025). Reported award amounts total $1,389,581. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Defense