High Temperature Package for Recently Developed Silicon Carbide

Earlier works have been extended to develop electronic packages for use under corrosive and high temperature environments. Most silicon-based semiconductor devices can operate only below 300C. New developments of amorphous silicon carbide packages have attracted wide interest due to the capability of tailoring electronic, optical and structural properties for microhybrid and optoelectronic device application under extreme environments. The objective of this proposed project is to develop a manufacturing process with a silicon carbide package. Selection of materials and the design of the package will be discussed. The incorporation of the Navy designed package as a prototype design for developing prototype commercial packages will also be mentioned.